2SK3816-DL-E related parameters_2SK3816-DL-E PDF documentation_ON Semiconductor

MOSFETs - Single

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Specifications

Description	Details
Series	-
Package	Tape & Reel (TR)
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	60 V
Current - Continuous Drain (Id) @ 25°C	40A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	4V, 10V
Rds On (Max) @ Id, Vgs	26mOhm @ 20A, 10V
Vgs(th) (Max) @ Id	2.6V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	40 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	1780 pF @ 20 V
FET Feature	-
Power Dissipation (Max)	1.65W (Ta), 50W (Tc)
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	SMP-FD
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63

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