PSMN8R0-30YL,115 related parameters_PSMN8R0-30YL,115 PDF documentation_NXP USA Inc.

MOSFETs - Single

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Specifications

Description	Details
Series	TrenchMOS™
Package	Bulk
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30 V
Current - Continuous Drain (Id) @ 25°C	62A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	8.3mOhm @ 15A, 10V
Vgs(th) (Max) @ Id	2.15V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	18.3 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	1.005 pF @ 15 V
FET Feature	-
Power Dissipation (Max)	56W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	LFPAK56, Power-SO8
Package / Case	SC-100, SOT-669

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