BTS110E3045ANTMA1 related parameters_BTS110E3045ANTMA1 PDF documentation_Infineon Technologies

MOSFETs - Single

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Specifications

Description	Details
Series	TEMPFET®
Package	Tape & Reel (TR)
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100 V
Current - Continuous Drain (Id) @ 25°C	10A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	-
Rds On (Max) @ Id, Vgs	200mOhm @ 5A, 10V
Vgs(th) (Max) @ Id	3.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	-
Vgs (Max)	-
Input Capacitance (Ciss) (Max) @ Vds	600 pF @ 25 V
FET Feature	-
Power Dissipation (Max)	-
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	TO-220AB
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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