3LP01C-TB-H related parameters_3LP01C-TB-H PDF documentation_ON Semiconductor

MOSFETs - Single

The picture is for reference only

Please fill in the inquiry information for purchasing and consulting products

PartName*	Quantity*	Batch Number	Package	Manufacturer	Other requirements

Please fill in the contact details and reply to you in 3 minutes

In Stock：19,576(Ref. price)

Qty.	Unit Price	Ext. Price
No price, please contact inquiry

Qty：

Add inquiry Quick quote

Related products

Documents

Specifications

Description	Details
Series	-
Package	Tape & Reel (TR)
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30 V
Current - Continuous Drain (Id) @ 25°C	100mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)	1.5V, 4V
Rds On (Max) @ Id, Vgs	10.4Ohm @ 50mA, 4V
Vgs(th) (Max) @ Id	-
Gate Charge (Qg) (Max) @ Vgs	1.43 nC @ 10 V
Vgs (Max)	±10V
Input Capacitance (Ciss) (Max) @ Vds	7.5 pF @ 10 V
FET Feature	-
Power Dissipation (Max)	250mW (Ta)
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	3-CP
Package / Case	TO-236-3, SC-59, SOT-23-3

Other

Price advantage, 3LP01C-TB-H is available in stock and can be delivered on the same day

Recommended Product

Part No	Manufacturer	Product Category	Datasheet	Description	Reference price	Quantity
SI4408DY-T1-E3	Vishay Siliconix	MOSFETs - Single	Datasheet	MOSFET N-CH 20V 14A 8SO	$2.44020	In Stock:5572
NDS9405	ON Semiconductor	MOSFETs - Single	Datasheet	MOSFET P-CH 20V 4.3A 8SOIC	No price	In Stock:17700
IRFRC20TRLPBF	Vishay Siliconix	MOSFETs - Single	Datasheet	MOSFET N-CH 600V 2A DPAK	$1.87110	In Stock:17702
IRF141	International Rectifier	MOSFETs - Single	Datasheet	28A, 80V, 0.077OHM, N-CHANNEL PO	$1.53450	In Stock:17704
BUZ311	Infineon Technologies	MOSFETs - Single	Datasheet	N-CHANNEL POWER MOSFET	$0.79680	In Stock:2230