UF3SC065040D8S related parameters_UF3SC065040D8S PDF documentation_UnitedSiC

MOSFETs - Single

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Specifications

Description	Details
Series	-
Package	Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
FET Type	N-Channel
Technology	SiCFET (Cascode SiCJFET)
Drain to Source Voltage (Vdss)	650 V
Current - Continuous Drain (Id) @ 25°C	18A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	12V
Rds On (Max) @ Id, Vgs	58mOhm @ 20A, 12V
Vgs(th) (Max) @ Id	6V @ 10mA
Gate Charge (Qg) (Max) @ Vgs	43 nC @ 12 V
Vgs (Max)	±25V
Input Capacitance (Ciss) (Max) @ Vds	1500 pF @ 100 V
FET Feature	-
Power Dissipation (Max)	125W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	4-DFN (8x8)
Package / Case	4-PowerTSFN

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