TP65H300G4LSG related parameters_TP65H300G4LSG PDF documentation_Transphorm

MOSFETs - Single

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Specifications

Description	Details
Series	-
Package	Tray
FET Type	N-Channel
Technology	GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss)	650 V
Current - Continuous Drain (Id) @ 25°C	6.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	8V
Rds On (Max) @ Id, Vgs	312mOhm @ 5A, 8V
Vgs(th) (Max) @ Id	2.6V @ 500µA
Gate Charge (Qg) (Max) @ Vgs	9.6 nC @ 8 V
Vgs (Max)	±18V
Input Capacitance (Ciss) (Max) @ Vds	760 pF @ 400 V
FET Feature	-
Power Dissipation (Max)	21W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	3-PQFN (8x8)
Package / Case	3-PowerDFN

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