SI5411EDU-T1-GE3 related parameters_SI5411EDU-T1-GE3 PDF documentation_Vishay Siliconix

MOSFETs - Single

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Specifications

Description	Details
Series	TrenchFET®
Package	Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	12 V
Current - Continuous Drain (Id) @ 25°C	25A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	1.8V, 4.5V
Rds On (Max) @ Id, Vgs	8.2mOhm @ 6A, 4.5V
Vgs(th) (Max) @ Id	900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs	105 nC @ 8 V
Vgs (Max)	±8V
Input Capacitance (Ciss) (Max) @ Vds	4100 pF @ 6 V
FET Feature	-
Power Dissipation (Max)	3.1W (Ta), 31W (Tc)
Operating Temperature	-50°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PowerPAK® ChipFet Single
Package / Case	PowerPAK® ChipFET™ Single

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