ZVP4525E6TC related parameters_ZVP4525E6TC PDF documentation_Diodes Incorporated

MOSFETs - Single

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Specifications

Description	Details
Series	-
Package	Tape & Reel (TR)
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	250 V
Current - Continuous Drain (Id) @ 25°C	197mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)	3.5V, 10V
Rds On (Max) @ Id, Vgs	14Ohm @ 200mA, 10V
Vgs(th) (Max) @ Id	2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	3.45 nC @ 10 V
Vgs (Max)	±40V
Input Capacitance (Ciss) (Max) @ Vds	73 pF @ 25 V
FET Feature	-
Power Dissipation (Max)	1.1W (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	SOT-23-6
Package / Case	SOT-23-6

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