G2R120MT33J related parameters_G2R120MT33J PDF documentation_GeneSiC Semiconductor

MOSFETs - Single

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Specifications

Description	Details
Series	G2R™
Package	Tube
FET Type	N-Channel
Technology	SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)	3300 V
Current - Continuous Drain (Id) @ 25°C	35A
Drive Voltage (Max Rds On, Min Rds On)	20V
Rds On (Max) @ Id, Vgs	156mOhm @ 20A, 20V
Vgs(th) (Max) @ Id	-
Gate Charge (Qg) (Max) @ Vgs	145 nC @ 20 V
Vgs (Max)	+25V, -10V
Input Capacitance (Ciss) (Max) @ Vds	3706 pF @ 1000 V
FET Feature	-
Power Dissipation (Max)	-
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	TO-263-7
Package / Case	TO-263-8, D²Pak (7 Leads + Tab), TO-263CA

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