STN2NE10L related parameters_STN2NE10L PDF documentation_STMicroelectronics

MOSFETs - Single

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Specifications

Description	Details
Series	STripFET™
Package	Tape & Reel (TR)
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100 V
Current - Continuous Drain (Id) @ 25°C	1.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	5V, 10V
Rds On (Max) @ Id, Vgs	400mOhm @ 1A, 10V
Vgs(th) (Max) @ Id	3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	14 nC @ 5 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	345 pF @ 25 V
FET Feature	-
Power Dissipation (Max)	2.5W (Tc)
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	SOT-223
Package / Case	TO-261-4, TO-261AA

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