AUIRFN7107TR-IR related parameters_AUIRFN7107TR-IR PDF documentation_International Rectifier

MOSFETs - Single

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Specifications

Description	Details
Series	Automotive, AEC-Q101, HEXFET®
Package	Bulk
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	75 V
Current - Continuous Drain (Id) @ 25°C	14A (Ta), 75A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	-
Rds On (Max) @ Id, Vgs	8.5mOhm @ 45A, 10V
Vgs(th) (Max) @ Id	4V @ 100µA
Gate Charge (Qg) (Max) @ Vgs	77 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	3001 pF @ 25 V
FET Feature	-
Power Dissipation (Max)	4.4W (Ta), 125W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PG-TDSON-8-10
Package / Case	8-PowerVDFN

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