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MOSFETs - Single
STP28N60DM2 Picture

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STP28N60DM2

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In Stock:1,520(Ref. price)
Qty.Unit PriceExt. Price
1
$3.15560
$3.15560
Documents
Specifications
DescriptionDetails
Series
MDmesh™ DM2
Package
Tube
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25°C
21A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
160mOhm @ 10.5A, 10V
Vgs(th) (Max) @ Id
5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
34 nC @ 10 V
Vgs (Max)
±25V
Input Capacitance (Ciss) (Max) @ Vds
1500 pF @ 100 V
FET Feature
-
Power Dissipation (Max)
170W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-220
Package / Case
TO-220-3
Other
Price advantage, STP28N60DM2 is available in stock and can be delivered on the same day
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