STV160NF02LT4 related parameters_STV160NF02LT4 PDF documentation_STMicroelectronics

MOSFETs - Single

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Specifications

Description	Details
Series	STripFET™ II
Package	Tape & Reel (TR)Cut Tape (CT)
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	20 V
Current - Continuous Drain (Id) @ 25°C	160A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	5V, 10V
Rds On (Max) @ Id, Vgs	2.5mOhm @ 80A, 10V
Vgs(th) (Max) @ Id	1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	160 nC @ 10 V
Vgs (Max)	±15V
Input Capacitance (Ciss) (Max) @ Vds	4800 pF @ 15 V
FET Feature	-
Power Dissipation (Max)	210W (Tc)
Operating Temperature	175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	10-PowerSO
Package / Case	PowerSO-10 Exposed Bottom Pad

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