IPZ40N04S58R4ATMA1 related parameters_IPZ40N04S58R4ATMA1 PDF documentation_Infineon Technologies

MOSFETs - Single

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Specifications

Description	Details
Series	Automotive, AEC-Q101, OptiMOS™
Package	Bulk
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	40 V
Current - Continuous Drain (Id) @ 25°C	40A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	7V, 10V
Rds On (Max) @ Id, Vgs	8.4mOhm @ 20A, 10V
Vgs(th) (Max) @ Id	3.4V @ 10µA
Gate Charge (Qg) (Max) @ Vgs	13.7 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	771 pF @ 25 V
FET Feature	-
Power Dissipation (Max)	34W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PG-TSDSON-8-32
Package / Case	8-PowerTDFN

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