IPI90R1K2C3XKSA1 related parameters_IPI90R1K2C3XKSA1 PDF documentation_Infineon Technologies

MOSFETs - Single

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Specifications

Description	Details
Series	CoolMOS™
Package	Tube
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	900 V
Current - Continuous Drain (Id) @ 25°C	5.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	1.2Ohm @ 2.8A, 10V
Vgs(th) (Max) @ Id	3.5V @ 310µA
Gate Charge (Qg) (Max) @ Vgs	28 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	710 pF @ 100 V
FET Feature	-
Power Dissipation (Max)	83W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	PG-TO262-3
Package / Case	TO-262-3 Long Leads, I²Pak, TO-262AA

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