CSD23285F5 related parameters_CSD23285F5 PDF documentation_Texas Instruments

MOSFETs - Single

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Specifications

Description	Details
Series	FemtoFET™
Package	Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	12 V
Current - Continuous Drain (Id) @ 25°C	5.4A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	1.5V, 4.5V
Rds On (Max) @ Id, Vgs	35mOhm @ 1A, 4.5V
Vgs(th) (Max) @ Id	950mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs	4.2 nC @ 4.5 V
Vgs (Max)	-6V
Input Capacitance (Ciss) (Max) @ Vds	628 pF @ 6 V
FET Feature	-
Power Dissipation (Max)	500mW (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	3-PICOSTAR
Package / Case	3-SMD, No Lead

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