PSMN5R3-25MLDX related parameters_PSMN5R3-25MLDX PDF documentation_NXP USA Inc.

MOSFETs - Single

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Specifications

Description	Details
Series	-
Package	Bulk
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	25 V
Current - Continuous Drain (Id) @ 25°C	70A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	5.9mOhm @ 15A, 10V
Vgs(th) (Max) @ Id	2.2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	12.7 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	858 pF @ 12 V
FET Feature	Schottky Diode (Body)
Power Dissipation (Max)	51W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	LFPAK33
Package / Case	SOT-1210, 8-LFPAK33

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