SQ1470EH-T1-GE3 related parameters_SQ1470EH-T1-GE3 PDF documentation_Vishay Siliconix

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Specifications

Description	Details
Series	*
Package	Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30 V
Current - Continuous Drain (Id) @ 25°C	2.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	-
Rds On (Max) @ Id, Vgs	65mOhm @ 3.8A, 4.5V
Vgs(th) (Max) @ Id	1.6V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	6.6 nC @ 4.5 V
Vgs (Max)	-
Input Capacitance (Ciss) (Max) @ Vds	610 pF @ 25 V
FET Feature	-
Power Dissipation (Max)	-
Operating Temperature	-
Mounting Type	Surface Mount
Supplier Device Package	SC-70-6 (SOT-363)
Package / Case	6-TSSOP, SC-88, SOT-363

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