NTE464 related parameters_NTE464 PDF documentation_NTE Electronics, Inc

MOSFETs - Single

The picture is for reference only

Please fill in the inquiry information for purchasing and consulting products

PartName*	Quantity*	Batch Number	Package	Manufacturer	Other requirements

Please fill in the contact details and reply to you in 3 minutes

In Stock：3,248(Ref. price)

Qty.	Unit Price	Ext. Price
1	$10.66560	$10.66560

Qty：

Add inquiry Quick quote

Related products

Documents

Specifications

Description	Details
Series	-
Package	Bag
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	25 V
Current - Continuous Drain (Id) @ 25°C	10A
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	600Ohm @ 0A, 10V
Vgs(th) (Max) @ Id	5V @ 10A
Gate Charge (Qg) (Max) @ Vgs	-
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	5 pF @ 10 V
FET Feature	Standard
Power Dissipation (Max)	800mW (Tc)
Operating Temperature	175°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-72
Package / Case	TO-72-3

Other

Price advantage, NTE464 is available in stock and can be delivered on the same day

Recommended Product

Part No	Manufacturer	Product Category	Datasheet	Description	Reference price	Quantity
MCU12P10-TP	Micro Commercial Co	MOSFETs - Single	Datasheet	MOSFET P-CH 100V 12A DPAK	$0.64020	In Stock:20302
IPSA70R1K4CEAKMA1	Infineon Technologies	MOSFETs - Single	Datasheet	MOSFET N-CH 700V 5.4A TO251-3	$0.65280	In Stock:4889
STB12NM50N	STMicroelectronics	MOSFETs - Single	Datasheet	MOSFET N-CH 500V 11A D2PAK	No price	In Stock:3525
SI2305ADS-T1-E3	Vishay Siliconix	MOSFETs - Single	Datasheet	MOSFET P-CH 8V 5.4A SOT23-3	No price	In Stock:20310
IPA60R145CFD7XKSA1	Infineon Technologies	MOSFETs - Single	Datasheet	HIGH POWER_NEW	$2.16003	In Stock:20312