BST82,235 related parameters_BST82,235 PDF documentation_Nexperia USA Inc.

MOSFETs - Single

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Specifications

Description	Details
Series	TrenchMOS™
Package	Tape & Reel (TR)
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100 V
Current - Continuous Drain (Id) @ 25°C	190mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)	5V
Rds On (Max) @ Id, Vgs	10Ohm @ 150mA, 5V
Vgs(th) (Max) @ Id	2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	-
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	40 pF @ 10 V
FET Feature	-
Power Dissipation (Max)	830mW (Tc)
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	TO-236AB
Package / Case	TO-236-3, SC-59, SOT-23-3

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