NTMFS6H848NLT1G related parameters_NTMFS6H848NLT1G PDF documentation_ON Semiconductor

MOSFETs - Single

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Specifications

Description	Details
Series	-
Package	Tape & Reel (TR)
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	80 V
Current - Continuous Drain (Id) @ 25°C	13A (Ta), 59A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	8.8mOhm @ 10A, 10V
Vgs(th) (Max) @ Id	2V @ 70µA
Gate Charge (Qg) (Max) @ Vgs	25 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	1420 pF @ 40 V
FET Feature	-
Power Dissipation (Max)	3.7W (Ta), 73W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	5-DFN (5x6) (8-SOFL)
Package / Case	8-PowerTDFN, 5 Leads

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