IRF7483MTRPBF related parameters_IRF7483MTRPBF PDF documentation_International Rectifier

MOSFETs - Single

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Specifications

Description	Details
Series	StrongIRFET™
Package	Bulk
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	40 V
Current - Continuous Drain (Id) @ 25°C	135A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	6V, 10V
Rds On (Max) @ Id, Vgs	2.3mOhm @ 81A, 10V
Vgs(th) (Max) @ Id	3.9V @ 100µA
Gate Charge (Qg) (Max) @ Vgs	81 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	3.913 pF @ 25 V
FET Feature	-
Power Dissipation (Max)	74W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	DirectFET™ Isometric MF
Package / Case	DirectFET™ Isometric MF

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