STT6N3LLH6 related parameters_STT6N3LLH6 PDF documentation_STMicroelectronics

MOSFETs - Single

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Specifications

Description	Details
Series	DeepGATE™, STripFET™ VI
Package	Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30 V
Current - Continuous Drain (Id) @ 25°C	6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	25mOhm @ 3A, 10V
Vgs(th) (Max) @ Id	1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	3.6 nC @ 4.5 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	283 pF @ 24 V
FET Feature	-
Power Dissipation (Max)	1.6W (Tc)
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	SOT-23-6
Package / Case	SOT-23-6

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