TP2435N8-G related parameters_TP2435N8-G PDF documentation_Microchip Technology

MOSFETs - Single

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Specifications

Description	Details
Series	-
Package	Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	350 V
Current - Continuous Drain (Id) @ 25°C	231mA (Tj)
Drive Voltage (Max Rds On, Min Rds On)	3V, 10V
Rds On (Max) @ Id, Vgs	15Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id	2.4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	-
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	200 pF @ 25 V
FET Feature	-
Power Dissipation (Max)	1.6W (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	TO-243AA (SOT-89)
Package / Case	TO-243AA

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