IPC70N04S54R6ATMA1 related parameters_IPC70N04S54R6ATMA1 PDF documentation_Infineon Technologies

MOSFETs - Single

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Specifications

Description	Details
Series	Automotive, AEC-Q101, OptiMOS™
Package	Bulk
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	40 V
Current - Continuous Drain (Id) @ 25°C	70A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	7V, 10V
Rds On (Max) @ Id, Vgs	4.6mOhm @ 35A, 10V
Vgs(th) (Max) @ Id	3.4V @ 17µA
Gate Charge (Qg) (Max) @ Vgs	24.2 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	1.43 pF @ 25 V
FET Feature	-
Power Dissipation (Max)	50W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PG-TDSON-8-34
Package / Case	8-PowerTDFN

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