DMT12H090LFDF4-7 related parameters_DMT12H090LFDF4-7 PDF documentation_Diodes Incorporated

MOSFETs - Single

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Specifications

Description	Details
Series	-
Package	Tape & Reel (TR)
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	115 V
Current - Continuous Drain (Id) @ 25°C	3.4A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	3V, 10V
Rds On (Max) @ Id, Vgs	90mOhm @ 3.5A, 10V
Vgs(th) (Max) @ Id	2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	6 nC @ 10 V
Vgs (Max)	±12V
Input Capacitance (Ciss) (Max) @ Vds	251 pF @ 50 V
FET Feature	-
Power Dissipation (Max)	900mW (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	X2-DFN2020-6
Package / Case	6-PowerXDFN

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