NTS2101PT1G related parameters_NTS2101PT1G PDF documentation_ON Semiconductor

MOSFETs - Single

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Specifications

Description	Details
Series	-
Package	Bulk
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	8 V
Current - Continuous Drain (Id) @ 25°C	1.4A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	1.8V, 4.5V
Rds On (Max) @ Id, Vgs	100mOhm @ 1A, 4.5V
Vgs(th) (Max) @ Id	700mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs	6.4 nC @ 5 V
Vgs (Max)	±8V
Input Capacitance (Ciss) (Max) @ Vds	640 pF @ 8 V
FET Feature	-
Power Dissipation (Max)	290mW (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	SC-70-3 (SOT323)
Package / Case	SC-70, SOT-323

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