A2G35S200-01SR3 related parameters_A2G35S200-01SR3 PDF documentation_NXP USA Inc.

MOSFETs - RF

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Specifications

Description	Details
Series	-
Package	Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
Transistor Type	GaN HEMT
Frequency	3.4GHz ~ 3.6GHz
Gain	16.1dB
Voltage - Test	48 V
Current Rating (Amps)	-
Noise Figure	-
Current - Test	291 mA
Power - Output	180W
Voltage - Rated	125 V
Package / Case	NI-400S-2S
Supplier Device Package	NI-400S-2S

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