DF23MR12W1M1B11BPSA1 related parameters_DF23MR12W1M1B11BPSA1 PDF documentation_Infineon Technologies

MOSFETs - Arrays

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Specifications

Description	Details
Series	CoolSiC™+
Package	Tray
FET Type	2 N-Channel (Dual)
FET Feature	Silicon Carbide (SiC)
Drain to Source Voltage (Vdss)	1200V
Current - Continuous Drain (Id) @ 25°C	25A (Tj)
Rds On (Max) @ Id, Vgs	45mOhm @ 25A, 15V (Typ)
Vgs(th) (Max) @ Id	5.55V @ 10mA
Gate Charge (Qg) (Max) @ Vgs	62nC @ 15V
Input Capacitance (Ciss) (Max) @ Vds	1840pF @ 800V
Power - Max	20mW
Operating Temperature	-40°C ~ 150°C (TJ)
Mounting Type	Chassis Mount
Package / Case	Module
Supplier Device Package	AG-EASY1BM-2

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