SI8900EDB-T2-E1 related parameters_SI8900EDB-T2-E1 PDF documentation_Vishay Siliconix

MOSFETs - Arrays

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Specifications

Description	Details
Series	TrenchFET®
Package	Tape & Reel (TR)
FET Type	2 N-Channel (Dual) Common Drain
FET Feature	Logic Level Gate
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25°C	5.4A
Rds On (Max) @ Id, Vgs	-
Vgs(th) (Max) @ Id	1V @ 1.1mA
Gate Charge (Qg) (Max) @ Vgs	-
Input Capacitance (Ciss) (Max) @ Vds	-
Power - Max	1W
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Package / Case	10-UFBGA, CSPBGA
Supplier Device Package	10-Micro Foot™ CSP (2x5)

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