APTMC120TAM34CT3AG related parameters_APTMC120TAM34CT3AG PDF documentation_Microchip Technology

MOSFETs - Arrays

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Specifications

Description	Details
Series	*
Package	Bulk
FET Type	6 N-Channel (3-Phase Bridge)
FET Feature	Silicon Carbide (SiC)
Drain to Source Voltage (Vdss)	1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C	74A (Tc)
Rds On (Max) @ Id, Vgs	34mOhm @ 50A, 20V
Vgs(th) (Max) @ Id	4V @ 15mA
Gate Charge (Qg) (Max) @ Vgs	161nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds	2788pF @ 1000V
Power - Max	375W
Operating Temperature	-40°C ~ 175°C (TJ)
Mounting Type	Chassis Mount
Package / Case	Module
Supplier Device Package	SP3

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