NTMFD1D4N02P1E related parameters_NTMFD1D4N02P1E PDF documentation_ON Semiconductor

MOSFETs - Arrays

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Specifications

Description	Details
Series	-
Package	Tape & Reel (TR)
FET Type	2 N-Channel (Dual) Asymmetrical
FET Feature	Standard
Drain to Source Voltage (Vdss)	25V
Current - Continuous Drain (Id) @ 25°C	13A (Ta), 74A (Tc), 24A (Ta), 155A (Tc)
Rds On (Max) @ Id, Vgs	3.3mOhm @ 20A, 10V, 1.1mOhm @ 37A, 10V
Vgs(th) (Max) @ Id	2V @ 250µA, 2V @ 800µA
Gate Charge (Qg) (Max) @ Vgs	7.2nC @ 4.5V, 21.5nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds	1180pF @ 13V, 3603pF @ 13V
Power - Max	960mW (Ta), 1W (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Package / Case	8-PowerWDFN
Supplier Device Package	8-PQFN (5x6)

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