SIZF914DT-T1-GE3 related parameters_SIZF914DT-T1-GE3 PDF documentation_Vishay Siliconix

MOSFETs - Arrays

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Specifications

Description	Details
Series	PowerPAIR®, TrenchFET®
Package	Tape & Reel (TR)
FET Type	2 N-Channel (Dual)
FET Feature	Standard
Drain to Source Voltage (Vdss)	25V
Current - Continuous Drain (Id) @ 25°C	23.5A (Ta), 40A (Tc), 52A (Ta), 60A (Tc)
Rds On (Max) @ Id, Vgs	3.8mOhm @ 10A, 10V, 0.9mOhm @ 10A, 10V
Vgs(th) (Max) @ Id	2.4V @ 250µA, 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	21nC, 98nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	1050pF, 4670pF @ 10V
Power - Max	3.4W (Ta), 26.6W (Tc), 4W (Ta), 60W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Package / Case	8-PowerWDFN
Supplier Device Package	8-PowerPair® (6x5)

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