HP8MA2TB1 related parameters_HP8MA2TB1 PDF documentation_Rohm Semiconductor

MOSFETs - Arrays

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Specifications

Description	Details
Series	-
Package	Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
FET Type	N and P-Channel
FET Feature	Standard
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25°C	18A (Ta), 15A (Ta)
Rds On (Max) @ Id, Vgs	9.6mOhm @ 18A, 10V, 17.9mOhm @ 15A, 10V
Vgs(th) (Max) @ Id	2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	22nC, 25nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	1100pF, 1250pF @ 15V
Power - Max	3W (Ta)
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Package / Case	8-PowerTDFN
Supplier Device Package	8-HSOP

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