TPC8213-H(TE12LQ,M related parameters_TPC8213-H(TE12LQ,M PDF documentation_Toshiba Semiconductor and Storage

MOSFETs - Arrays

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Specifications

Description	Details
Series	-
Package	Tape & Reel (TR)
FET Type	2 N-Channel (Dual)
FET Feature	Logic Level Gate
Drain to Source Voltage (Vdss)	60V
Current - Continuous Drain (Id) @ 25°C	5A
Rds On (Max) @ Id, Vgs	50mOhm @ 2.5A, 10V
Vgs(th) (Max) @ Id	2.3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	11nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	625pF @ 10V
Power - Max	450mW
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Package / Case	8-SOIC (0.173", 4.40mm Width)
Supplier Device Package	8-SOP (5.5x6.0)

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