SI3588DV-T1-GE3 related parameters_SI3588DV-T1-GE3 PDF documentation_Vishay Siliconix

MOSFETs - Arrays

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Specifications

Description	Details
Series	TrenchFET®
Package	Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
FET Type	N and P-Channel
FET Feature	Logic Level Gate
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25°C	2.5A, 570mA
Rds On (Max) @ Id, Vgs	80mOhm @ 3A, 4.5V
Vgs(th) (Max) @ Id	450mV @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs	7.5nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds	-
Power - Max	830mW, 83mW
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Package / Case	SOT-23-6 Thin, TSOT-23-6
Supplier Device Package	6-TSOP

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