FDC6322C related parameters_FDC6322C PDF documentation_Fairchild Semiconductor

MOSFETs - Arrays

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Specifications

Description	Details
Series	-
Package	Bulk
FET Type	N and P-Channel
FET Feature	Logic Level Gate
Drain to Source Voltage (Vdss)	25V
Current - Continuous Drain (Id) @ 25°C	220mA, 460mA
Rds On (Max) @ Id, Vgs	4Ohm @ 400mA, 4.5V
Vgs(th) (Max) @ Id	1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	0.7nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds	9.5pF @ 10V
Power - Max	700mW
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Package / Case	SOT-23-6 Thin, TSOT-23-6
Supplier Device Package	SuperSOT™-6

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