SH8M51GZETB related parameters_SH8M51GZETB PDF documentation_Rohm Semiconductor

MOSFETs - Arrays

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Specifications

Description	Details
Series	-
Package	Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
FET Type	N and P-Channel
FET Feature	Standard
Drain to Source Voltage (Vdss)	100V
Current - Continuous Drain (Id) @ 25°C	3A (Ta), 2.5A (Ta)
Rds On (Max) @ Id, Vgs	170mOhm @ 3A, 10V, 290mOhm @ 2.5A, 10V
Vgs(th) (Max) @ Id	2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	8.5nC, 12.5nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds	610pF, 1550pF @ 25V
Power - Max	1.4W (Ta)
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Package / Case	8-SOIC (0.154", 3.90mm Width)
Supplier Device Package	8-SOP

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