SSM6L09FUTE85LF related parameters_SSM6L09FUTE85LF PDF documentation_Toshiba Semiconductor and Storage

MOSFETs - Arrays

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Specifications

Description	Details
Series	-
Package	Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
FET Type	N and P-Channel
FET Feature	Logic Level Gate
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25°C	400mA, 200mA
Rds On (Max) @ Id, Vgs	700mOhm @ 200MA, 10V
Vgs(th) (Max) @ Id	1.8V @ 100µA
Gate Charge (Qg) (Max) @ Vgs	-
Input Capacitance (Ciss) (Max) @ Vds	20pF @ 5V
Power - Max	300mW
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Package / Case	6-TSSOP, SC-88, SOT-363
Supplier Device Package	US6

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