BSC0911NDATMA1 related parameters_BSC0911NDATMA1 PDF documentation_Infineon Technologies

MOSFETs - Arrays

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Specifications

Description	Details
Series	OptiMOS™
Package	Bulk
FET Type	2 N-Channel (Dual) Asymmetrical
FET Feature	Logic Level Gate, 4.5V Drive
Drain to Source Voltage (Vdss)	25V
Current - Continuous Drain (Id) @ 25°C	18A, 30A
Rds On (Max) @ Id, Vgs	3.2mOhm @ 20A, 10V
Vgs(th) (Max) @ Id	2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	12nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds	1600pF @ 12V
Power - Max	1W
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Package / Case	8-PowerTDFN
Supplier Device Package	PG-TISON-8

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