SI5509DC-T1-E3 related parameters_SI5509DC-T1-E3 PDF documentation_Vishay Siliconix

MOSFETs - Arrays

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Specifications

Description	Details
Series	TrenchFET®
Package	Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
FET Type	N and P-Channel
FET Feature	Logic Level Gate
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25°C	6.1A, 4.8A
Rds On (Max) @ Id, Vgs	52mOhm @ 5A, 4.5V
Vgs(th) (Max) @ Id	2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	6.6nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds	455pF @ 10V
Power - Max	4.5W
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Package / Case	8-SMD, Flat Lead
Supplier Device Package	1206-8 ChipFET™

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