NDS8926 related parameters_NDS8926 PDF documentation_ON Semiconductor

MOSFETs - Arrays

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Specifications

Description	Details
Series	-
Package	Tape & Reel (TR)Cut Tape (CT)
FET Type	2 N-Channel (Dual)
FET Feature	Logic Level Gate
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25°C	5.5A
Rds On (Max) @ Id, Vgs	35mOhm @ 5.5A, 4.5V
Vgs(th) (Max) @ Id	1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	30nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds	760pF @ 10V
Power - Max	900mW
Operating Temperature	-
Mounting Type	Surface Mount
Package / Case	8-SOIC (0.154", 3.90mm Width)
Supplier Device Package	8-SOIC

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