SIZ700DT-T1-GE3 related parameters_SIZ700DT-T1-GE3 PDF documentation_Vishay Siliconix

MOSFETs - Arrays

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Specifications

Description	Details
Series	TrenchFET®
Package	Tape & Reel (TR)
FET Type	2 N-Channel (Half Bridge)
FET Feature	Standard
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25°C	16A
Rds On (Max) @ Id, Vgs	8.6mOhm @ 15A, 10V
Vgs(th) (Max) @ Id	2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	35nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	1300pF @ 10V
Power - Max	2.36W, 2.8W
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Package / Case	6-PowerPair™
Supplier Device Package	6-PowerPair™

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