FF8MR12W2M1B11BOMA1 related parameters_FF8MR12W2M1B11BOMA1 PDF documentation_Infineon Technologies

MOSFETs - Arrays

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Specifications

Description	Details
Series	CoolSiC™+
Package	Bulk
FET Type	2 N-Channel (Dual)
FET Feature	Silicon Carbide (SiC)
Drain to Source Voltage (Vdss)	1200V
Current - Continuous Drain (Id) @ 25°C	150A (Tj)
Rds On (Max) @ Id, Vgs	7.5mOhm @ 150A, 15V (Typ)
Vgs(th) (Max) @ Id	5.55V @ 60mA
Gate Charge (Qg) (Max) @ Vgs	372nC @ 15V
Input Capacitance (Ciss) (Max) @ Vds	11000pF @ 800V
Power - Max	20mW (Tc)
Operating Temperature	-40°C ~ 150°C (TJ)
Mounting Type	Chassis Mount
Package / Case	Module
Supplier Device Package	AG-EASY2BM-2

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