SI1958DH-T1-E3 related parameters_SI1958DH-T1-E3 PDF documentation_Vishay Siliconix

MOSFETs - Arrays

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Specifications

Description	Details
Series	TrenchFET®
Package	Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
FET Type	2 N-Channel (Dual)
FET Feature	Logic Level Gate
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25°C	1.3A
Rds On (Max) @ Id, Vgs	205mOhm @ 1.3A, 4.5V
Vgs(th) (Max) @ Id	1.6V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	3.8nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	105pF @ 10V
Power - Max	1.25W
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Package / Case	6-TSSOP, SC-88, SOT-363
Supplier Device Package	SC-70-6 (SOT-363)

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