SIZ270DT-T1-GE3 related parameters_SIZ270DT-T1-GE3 PDF documentation_Vishay Siliconix

MOSFETs - Arrays

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Specifications

Description	Details
Series	TrenchFET® Gen IV
Package	Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
FET Type	2 N-Channel (Dual)
FET Feature	Standard
Drain to Source Voltage (Vdss)	100V
Current - Continuous Drain (Id) @ 25°C	7.1A (Ta), 19.5A (Tc), 6.9A (Ta), 19.1A (Tc)
Rds On (Max) @ Id, Vgs	37.7mOhm @ 7A, 10V, 39.4mOhm @ 7A, 10V
Vgs(th) (Max) @ Id	2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	27nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	860pF @ 50V, 845pF @ 50V
Power - Max	4.3W (Ta), 33W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Package / Case	8-PowerWDFN
Supplier Device Package	8-PowerPair® (3.3x3.3)

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