QS8M13TCR related parameters_QS8M13TCR PDF documentation_Rohm Semiconductor

MOSFETs - Arrays

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Specifications

Description	Details
Series	-
Package	Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
FET Type	N and P-Channel
FET Feature	Logic Level Gate
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25°C	6A, 5A
Rds On (Max) @ Id, Vgs	28mOhm @ 6A, 10V
Vgs(th) (Max) @ Id	2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	5.5nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds	390pF @ 10V
Power - Max	1.5W
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Package / Case	8-SMD, Flat Lead
Supplier Device Package	TSMT8

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