PMGD175XN,115 related parameters_PMGD175XN,115 PDF documentation_NXP USA Inc.

MOSFETs - Arrays

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Specifications

Description	Details
Series	-
Package	Bulk
FET Type	2 N-Channel (Dual)
FET Feature	Logic Level Gate
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25°C	900mA
Rds On (Max) @ Id, Vgs	225mOhm @ 1A, 4.5V
Vgs(th) (Max) @ Id	1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	1.1nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds	75pF @ 15V
Power - Max	390mW
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Package / Case	6-TSSOP, SC-88, SOT-363
Supplier Device Package	6-TSSOP

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