2SD1697-AZ related parameters_2SD1697-AZ PDF documentation_Renesas Electronics America Inc

Transistors - Bipolar - Pre-Biased

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Specifications

Description	Details
Series	-
Package	Bulk
Transistor Type	NPN - Pre-Biased
Current - Collector (Ic) (Max)	800 mA
Voltage - Collector Emitter Breakdown (Max)	80 V
Resistor - Base (R1)	1 kOhms
Resistor - Emitter Base (R2)	-
DC Current Gain (hFE) (Min) @ Ic, Vce	4000 @ 300mA, 2V
Vce Saturation (Max) @ Ib, Ic	1.2V @ 1mA, 500mA
Current - Collector Cutoff (Max)	1µA (ICBO)
Frequency - Transition	-
Power - Max	1 W
Mounting Type	Through Hole
Package / Case	3-SSIP
Supplier Device Package	-

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