RN1309,LF related parameters_RN1309,LF PDF documentation_Toshiba Semiconductor and Storage

Transistors - Bipolar - Pre-Biased

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Specifications

Description	Details
Series	-
Package	Tape & Reel (TR)
Transistor Type	NPN - Pre-Biased
Current - Collector (Ic) (Max)	100 mA
Voltage - Collector Emitter Breakdown (Max)	50 V
Resistor - Base (R1)	47 kOhms
Resistor - Emitter Base (R2)	22 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce	70 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic	300mV @ 250µA, 5mA
Current - Collector Cutoff (Max)	500nA
Frequency - Transition	250 MHz
Power - Max	100 mW
Mounting Type	Surface Mount
Package / Case	SC-70, SOT-323
Supplier Device Package	USM

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